%0 Journal Article
%T Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces
%A Samsonenko, Yu. B.
%A Cirlin, G. É.
%A Egorov, V. A.
%A Polyakov, N. K.
%A Ulin, V. P.
%A Dubrovskii, V. G.
%J "Semiconductors"
%V 42
%N 12
%P 1445-1449
%@ 1063-7826
%D 2008-12-01
%I SP MAIK Nauka/Interperiodica
%~ DeepDyve