%0 Journal Article
%T Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator
%A Hosoi, Takuji
%A Watanabe, Kenta
%A Nozaki, Mikito
%A Yamada, Takahiro
%A Shimura, Takayoshi
%A Watanabe, Heiji
%J Japanese Journal of Applied Physics
%V 58
%N SC
%P 6
%@ 0021-4922
%D 2019-05-20
%~ DeepDyve