%0 Journal Article
%T Improved InGaAs/InP double‐heterojunction bipolar transistors using a thin‐emitter structure design
%A Driad, R.
%A McKinnon, W. R.
%A Laframboise, S.
%A McAlister, S. P.
%J Microwave and Optical Technology Letters
%V 21
%N 4
%P 235-238
%@ 0895-2477
%D 1999-05-20
%I Wiley Subscription Services, Inc., A Wiley Company
%~ DeepDyve