%0 Journal Article
%T Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
%A Navarro, Carlos
%A Karg, Siegfried
%A Marquez, Carlos
%A Navarro, Santiago
%A Convertino, Clarissa
%A Zota, Cezar
%A Czornomaz, Lukas
%A Gamiz, Francisco
%J Nature Electronics
%V 2
%N 9
%P 412-419
%D 2019-08-19
%I Nature Publishing Group UK
%~ DeepDyve