%0 Journal Article
%T A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD
%A Chen, Fangsheng
%A Chen, Hong
%A Deng, Zhen
%A Lu, Taiping
%A Fang, Yutao
%A Jiang, Yang
%A Ma, Ziguang
%A He, Miao
%J Applied Physics A: Materials Science  Processing
%V 118
%N 4
%P 1453-1457
%@ 0947-8396
%D 2014-12-23
%I Springer Berlin Heidelberg
%~ DeepDyve