%0 Journal Article
%T 56.67 fJ/bit single-ended disturb-free 5T loadless 4 kb SRAM using 90 nm CMOS technology
%A Wang, Chua-Chin
%A Wang, Deng-Shain
%A Chen, Sih-Yu
%J Analog Integrated Circuits and Signal Processing
%V 96
%N 3
%P 435-443
%@ 0925-1030
%D 2018-04-09
%I Springer US
%~ DeepDyve