%0 Journal Article
%T Brief Characterization Of Germanium Junction Field Effect Transistors (FETs) At 77,4, And 1.8K
%A Arentz, R. F.
%A Strecker, D. W.
%A Goebel, J. H.
%A McCreight, C. R.
%J Proceedings of SPIE
%V 364
%P 141-152
%@ 0277-786X
%D 1983-08-16
%I SPIE
%~ DeepDyve