%0 Journal Article
%T An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor (DET) for RF CMOS ICs
%A Ohnakado, Takahiro
%A Yamakawa, Satoshi
%A Furukawa, Akihiko
%A Nishikawa, Kazuyasu
%A Murakami, Takaaki
%A Hashizume, Yasushi
%A Sugahara, Kazuyuki
%A Tomisawa, Jun
%A Suematsu, Noriharu
%A Oomori, Tatsuo
%J Japanese Journal of Applied Physics
%V 42
%N 4S
%@ 0021-4922
%D 2003-04-01
%~ DeepDyve