%0 Journal Article %T Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology %A Kim, Sung Hwan %A Bae, Hyun Jun %A Oh, Chang Woo %A Kim, Dong-Won %A Yamada, Satoru %A Jin, Gyoyoung %A Roh, Yonghan %J Japanese Journal of Applied Physics %V 51 %N 4S %@ 0021-4922 %D 2012-04-01 %~ DeepDyve