%0 Journal Article
%T Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology
%A Kim, Sung Hwan
%A Bae, Hyun Jun
%A Oh, Chang Woo
%A Kim, Dong-Won
%A Yamada, Satoru
%A Jin, Gyoyoung
%A Roh, Yonghan
%J Japanese Journal of Applied Physics
%V 51
%N 4S
%@ 0021-4922
%D 2012-04-01
%~ DeepDyve