%0 Journal Article
%T Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method
%A Hussien, Salma A.
%A Abdellatif, Sameh O.
%J "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields"
%V 35
%N 2
%@ 0894-3370
%D 2022-03-01
%I Wiley Subscription Services, Inc., A Wiley Company
%~ DeepDyve