%0 Journal Article
%T Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs
%A Ikeda, Keiji
%A Yamashita, Yoshimi
%A Taoka, Noriyuki
%A Sugiyama, Naoharu
%A Takagi, Shin-ichi
%A ,
%J Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials
%D 2005-01-01
%I The Japan Society of Applied Physics
%~ DeepDyve