%0 Journal Article
%T Investigation of Low Energy Electron Irradiated SiO2 Based MOS Devices by Capacitance-Voltage and Thermally Stimulated Current Techniques
%A Aliasgari Renani, R.
%A Soltanovich, O. A.
%A Knyazev, M. A.
%A Koveshnikov, S. V.
%J Russian Microelectronics
%V 52
%N Suppl 1
%P S274-S278
%@ 1063-7397
%D 2023-12-01
%I Pleiades Publishing
%~ DeepDyve