%0 Journal Article
%T Oxygen Plasma Treated Aluminum as a Gate Dielectric  for AlGaN/GaN High Electron Mobility Transistors
%A Selvaraj, S. Lawrence
%A Egawa, Takashi
%J Journal of the Electrochemical Society
%V 156
%N 9
%P H690-H693
%@ 0013-4651
%D 2009-06-29
%~ DeepDyve