%0 Journal Article
%T Effect of external actions on characteristics of gallium arsenide Schottky-barrier diode structures
%A Kamalov, A.
%J Radioelectronics and Communications Systems
%V 51
%N 2
%P 80-86
%@ 0735-2727
%D 2008-04-13
%I Springer-Verlag
%~ DeepDyve