%0 Journal Article
%T Optimizing  HBr ­ Br2 ­  H 2 O   Etchants to Form Low Defect Regrowth Interfaces for Highly Reliable InGaAsP/InP Buried-Heterostructure Lasers
%A Shinoda, K.
%A Taike, A.
%A Sato, H.
%A Uchiyama , H.
%J Journal of the Electrochemical Society
%V 150
%N 2
%P G117-G121
%@ 0013-4651
%D 2003-01-03
%~ DeepDyve