%0 Journal Article
%T Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
%A Yan, Xiaobing
%A Zhang, Lei
%A Yang, Yongqiang
%A Zhou, Zhenyu
%A Zhao, Jianhui
%A Zhang, Yuanyuan
%A Liu, Qi
%A Chen, Jingsheng
%J Journal of Materials Chemistry C
%V 5
%N 42
%P 11046-11052
%@ 2050-7526
%D 2017-11-02
%I The Royal Society of Chemistry
%~ DeepDyve