%0 Journal Article
%T A 50 W dual‐band high‐efficiency gallium nitride high electron mobility transistor power amplifier with three‐stage L‐type DC bias circuit at 1.8 and 2.6 GHz
%A Kim, Jong‐Heon
%A Jeong, Dong‐Ki
%A Kim, Ji‐Yeon
%A Choi, Young‐Rak
%J Microwave and Optical Technology Letters
%V 64
%N 1
%P 16-22
%@ 0895-2477
%D 2022-01-01
%I Wiley Subscription Services, Inc., A Wiley Company
%~ DeepDyve