%0 Journal Article
%T Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application
%A Mizutani, Tomoko
%A Takeuchi, Kiyoshi
%A Saraya, Takuya
%A Kobayashi, Masaharu
%A Hiramoto, Toshiro
%J Japanese Journal of Applied Physics
%V 57
%N 4S
%P 6
%@ 0021-4922
%D 2018-04-01
%~ DeepDyve