%0 Journal Article
%T The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon
%A Morales, F. M.
%A Zgheib, Ch.
%A Molina, S. I.
%A Araújo, D.
%A García, R.
%A Fernández, C.
%A Sanz‐Hervás, A.
%A Masri, P.
%A Weih, P.
%A Stauden, Th.
%A Cimalla, V.
%A Ambacher, O.
%A Pezoldt, J.
%J Physica Status Solidi (C): Current Topics in Solid State Physics
%V 1
%N 2
%P 341-346
%@ 1862-6351
%D 2004-02-01
%I Wiley Subscription Services, Inc., A Wiley Company
%~ DeepDyve