%0 Journal Article
%T Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory
%A Mizukami, Makoto
%A Nishihara, Kiyohito
%A Ishida, Hirokazu
%A Aiso, Fumiki
%A Iguchi, Tadashi
%A Ichinose, Daigo
%A Fukumoto, Atsushi
%A Aoki, Nobutoshi
%A Kondo, Masaki
%A Izumida, Takashi
%A Tanimoto, Hiroyoshi
%A Enda, Toshiyuki
%A Watanabe, Hiroshi
%A Toriyama, Shuichi
%A Suzuki, Takashi
%A Mizushima, Ichiro
%A Arai, Fumitaka
%J Japanese Journal of Applied Physics
%V 49
%N 4S
%@ 0021-4922
%D 2010-04-01
%~ DeepDyve