%0 Journal Article
%T Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energy
%A Shen, Yaqing
%A Zhu, Kaichen
%A Xiao, Yiping
%A Waldhör, Dominic
%A Basher, Abdulrahman H.
%A Knobloch, Theresia
%A Pazos, Sebastian
%A Liang, Xianhu
%A Zheng, Wenwen
%A Yuan, Yue
%A Roldan, Juan B.
%A Schwingenschlögl, Udo
%A Tian, He
%A Wu, Huaqiang
%A Schranghamer, Thomas F.
%A Trainor, Nicholas
%A Redwing, Joan M.
%A Das, Saptarshi
%A Grasser, Tibor
%A Lanza, Mario
%J Nature Electronics
%V 7
%N 10
%P 856-867
%D 2024-10-01
%I Nature Publishing Group UK
%~ DeepDyve