%0 Journal Article
%T Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling
%A Lebedeva, N. M.
%A Il’inskaya, N. D.
%A Ivanov, P. A.
%J "Semiconductors"
%V 54
%N 2
%P 258-262
%@ 1063-7826
%D 2020-02-03
%I Pleiades Publishing
%~ DeepDyve