%0 Journal Article
%T Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants
%A Migita, Shinji
%A Morita, Yukinori
%A Masahara, Meishoku
%A Ota, Hiroyuki
%J Japanese Journal of Applied Physics
%V 52
%N 4S
%@ 0021-4922
%D 2013-04-01
%~ DeepDyve