%0 Journal Article
%T Thin silicon layer SOI power device with linearly-distance fixed charge islandsProject supported by the Guangxi Natural Science Foundation of China (No. 2013GXNSFAA019335), the Guangxi Department of Education Project (No.201202ZD041), the China Postdoctoral Science Foundation Project (Nos. 2012M521127, 2013T60566), and the National Natural Science Foundation of China (Nos. 61361011, 61274077, 61464003).
%A Zuo, Yuan
%A Li, Haiou
%A Zhai, Jianghui
%A Tang, Ning
%A Song, Shuxiang
%A Li, Qi
%J Journal of Semiconductors
%V 36
%N 5
%P 5
%@ 1674-4926
%D 2015-05-01
%~ DeepDyve