%0 Journal Article
%T High‐Performance p‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study
%A Yang, Jialin
%A Chen, Chuyao
%A Zhang, Jingwen
%A Zhou, Wenhan
%A Qu, Hengze
%A Li, Jing
%A Guo, Tingting
%A Shi, Xiaoqin
%A Wu, Zhenhua
%A Zhang, Shengli
%J Advanced Electronic Materials
%V 8
%N 10
%D 2022-10-01
%I Wiley Subscription Services, Inc., A Wiley Company
%~ DeepDyve