%0 Journal Article
%T Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory
%A Lee, Jang-Sik
%A Kang, Chang-Seok
%A Shin, Yoo-Cheol
%A Lee, Chang-Hyun
%A Park, Ki-Tae
%A Sel, Jong-Sun
%A Kim, Viena
%A Choe, Byeong-In
%A Sim, Jae-Sung
%A Choi, Jungdal
%A Kim, Kinam
%J Japanese Journal of Applied Physics
%V 45
%N 4S
%@ 0021-4922
%D 2006-04-01
%~ DeepDyve