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A. Huffman, M. Lueck, C. Bower, D. Temple (2007)
Effects of Assembly Process Parameters on the Structure and Thermal Stability of Sn-Capped Cu Bump Bonds2007 Proceedings 57th Electronic Components and Technology Conference
Myeong-Hyeok Jeong, Jae-Won Kim, Byung-Hyun Kwak, Young-Bae Park (2012)
Effects of annealing and current stressing on the intermetallic compounds growth kinetics of Cu/thin Sn/Cu bumpMicroelectronic Engineering, 89
W. Boettinger, C. Johnson, L. Bendersky, K. Moon, M. Williams, G. Stafford (2005)
Whisker and Hillock formation on Sn, Sn–Cu and Sn–Pb electrodepositsActa Materialia, 53
Byung-Hyun Kwak, Myeong-Hyeok Jeong, Jae-Won Kim, Byunghoon Lee, Hoo-Jeong Lee, Young-Bae Park (2012)
Correlations between interfacial reactions and bonding strengths of Cu/Sn/Cu pillar bumpMicroelectronic Engineering, 89
R. Agarwal, Wenqi Zhang, P. Limaye, R. Labie, B. Dimčić, A. Phommahaxay, P. Soussan (2010)
Cu/Sn microbumps interconnect for 3D TSV chip stacking2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)
N. Ibl (1980)
Some theoretical aspects of pulse electrolysisSurface Technology, 10
Tao-Chi Liu, Chien-min Liu, H. Hsiao, Jia-ling Lu, Yi Huang, Chih Chen (2012)
Fabrication and Characterization of (111)-Oriented and Nanotwinned Cu by Dc ElectrodepositionCrystal Growth & Design, 12
Y. Hsiao, Y. Chuang, C. Liu (2006)
Prevention of electromigration-induced Cu pad dissolution by using a high electromigration-resistance ternary Cu–Ni–Sn layerScripta Materialia, 54
Byunghoon Lee, H. Jeon, Soonjae Kim, Kee-Won Kwon, Jong‐Woong Kim, Hoo-Jeong Lee (2011)
Introduction of an Electroless-Plated Ni Diffusion Barrier in Cu/Sn/Cu Bonding Structures for 3D IntegrationJournal of The Electrochemical Society, 159
Zhihong Huang, R. Chatterjee, P. Justison, R. Hernandez, S. Pozder, A. Jain, E. Acosta, D. Gajewski, V. Mathew, R.E. Jones (2008)
Electromigration of Cu-Sn-Cu micropads in 3D interconnect2008 58th Electronic Components and Technology Conference
Jun Liu, Changqing Liu, P. Conway (2008)
Growth mechanism of copper column by electrodeposition for electronic interconnections2008 2nd Electronics System-Integration Technology Conference
D. Lu, C. Wong (2008)
Materials for Advanced Packaging
R. Tummala, P. Raj, A. Aggarwal, G. Mehrotra, S. Koh, S. Bansal, Tan Tiong, C. Ong, J. Chew, K. Vaidyanathan, V. Rao (2006)
Copper interconnections for high performance and fine pitch flip chip digital applications and ultra-miniaturized RF module applications56th Electronic Components and Technology Conference 2006
Byoung-Joon Kim, Gi-Tae Lim, Jaedong Kim, Kiwook Lee, Young-Bae Park, Ho-Young Lee, Young‐Chang Joo (2010)
Intermetallic Compound Growth and Reliability of Cu Pillar Bumps Under Current StressingJournal of Electronic Materials, 39
W. Choi, S. Kang, D. Shih (2002)
A study of the effects of solder volume on the interfacial reactions in solder joints using the differential scanning calorimetry techniqueJournal of Electronic Materials, 31
B. Ebersberger, C. Lee (2008)
Cu pillar bumps as a lead-free drop-in replacement for solder-bumped, flip-chip interconnects2008 58th Electronic Components and Technology Conference
L. Nicholls, R. Darveaux, A. Syed, S. Loo, T. Tee, T. Wassick, B. Batchelor (2009)
Comparative electromigration performance of Pb Free flip chip joints with varying board surface condition2009 59th Electronic Components and Technology Conference
S. Gao, A. Holmes (2006)
Thermosonic Flip Chip Interconnection Using Electroplated Copper Column ArraysIEEE Transactions on Advanced Packaging, 29
A. Bandyopadhyay, S. Sen (1990)
A study of intermetallic compound formation in a copper–tin bimetallic coupleJournal of Applied Physics, 67
S. Lee, Y. Guo, C. Ong (2005)
Electromigration effect on Cu-pillar(Sn) bumps2005 7th Electronic Packaging Technology Conference, 1
M. Datta, D. Landolt (1985)
Experimental investigation of mass transport in pulse platingSurface Technology, 25
B. Dyson, T. Anthony, D. Turnbull (1967)
Interstitial Diffusion of Copper in TinJournal of Applied Physics, 38
Kyung-Seob Kim, Jun-Mo Yang, Jae-pyoung Ahn (2010)
The effect of electric current and surface oxidization on the growth of Sn whiskersApplied Surface Science, 256
P. Dixit, J. Miao, R. Preisser (2006)
Fabrication of high aspect ratio 35 μm pitch through-wafer copper interconnects by electroplating for 3-D wafer stackingElectrochemical and Solid State Letters, 9
M. Burek, J. Greer (2010)
Fabrication and microstructure control of nanoscale mechanical testing specimens via electron beam lithography and electroplating.Nano letters, 10 1
U. Sahaym, S. Miller, M. Norton (2010)
Effect of plating temperature on Sn surface morphologyMaterials Letters, 64
Daquan Yu, T. Chai, M. Thew, Y. Ong, V. Rao, L. Wai, J. Lau (2009)
Electromigration study of 50 µm pitch micro solder bumps using four-point Kelvin structure2009 59th Electronic Components and Technology Conference
C. Seah, S. Mridha, L. Chan (2001)
DC/pulse plating of copper for trench/via fillingJournal of Materials Processing Technology, 114
K. Tu (2011)
Reliability challenges in 3D IC packaging technologyMicroelectron. Reliab., 51
Gi-Tae Lim, Byoung-Joon Kim, Kiwook Lee, Jaedong Kim, Young‐Chang Joo, Young-Bae Park (2009)
Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn BumpsJournal of Electronic Materials, 38
D. Yeh, H. Huntington (1984)
Extreme Fast-Diffusion System: Nickel in Single-Crystal TinPhysical Review Letters, 53
M. Gerber, C. Beddingfield, Shawn O'connor, Min Yoo, Minjae Lee, Daebyoung Kang, SungSu Park, C. Zwenger, R. Darveaux, R. Lanzone, KyungRok Park (2011)
Next generation fine pitch Cu Pillar technology — Enabling next generation silicon nodes2011 IEEE 61st Electronic Components and Technology Conference (ECTC)
W. Flack, Ha-Ai Nguyen, E. Capsuto, C. McEwen (2007)
Characterization of a thick copper pillar bump process2007 12th International Symposium on Advanced Packaging Materials: Processes, Properties, and Interfaces
Wenming Tang, A. He, Qi Liu, D. Ivey (2008)
Room temperature interfacial reactions in electrodeposited Au/Sn couplesActa Materialia, 56
PurposeThe purpose of this paper is to fabricate a new Cu-Sn-Ni-Cu interconnection microstructure for electromigration studies in 3D integration.Design/methodology/approachThe Cu-Sn-Ni-Cu interconnection microstructure is fabricated by a three-mask photolithography process with different electroplating processes. This microstructure consists of pads and conductive lines as the bottom layer, Cu-Sn-Ni-Cu pillars with the diameter of 10-40 μm as the middle layer and Cu conductive lines as the top layer. A lift-off process is adopted for the bottom layer. The Cu-Sn-Ni-Cu pillars are fabricated by photolithography with sequential electroplating processes. To fabricate the top layer, a sputtered Cu layer is introduced to prevent the middle-layer photoresist from being developed. With the final Cu electroplating processes, the Cu-Sn-Ni-Cu interconnection microstructure is successfully achieved.FindingsThe surface morphology of Cu-Sn pillars consists of densely packed clusters which are formed by an ordered arrangement of tetragonal Sn grains. The diffusion of Cu atoms into the Sn phases is observed at the Cu/Sn interface. Furthermore, the obtained Cu-Sn-Ni-Cu pillars have a flat surface with an average roughness of 13.9 nm. In addition, the introduction of Ni layer between the Sn and the top Cu layers in the Cu-Sn-Ni-Cu pillars can mitigate the diffusion of Cu atoms into Sn phases. The process is verified by checking the electrical performance using four-point probe measurements.Originality/valueThe method described in this paper which combined a three-mask photolithography process with sequential Cu, Sn, Ni and Cu electroplating processes provides a new way to fabricate the interconnection microstructure for future electromigration studies.
Soldering & Surface Mount Technology – Emerald Publishing
Published: Apr 4, 2016
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