Access the full text.
Sign up today, get DeepDyve free for 14 days.
Y. Tan, M. James, Qingchun Zhang, N. Wu, Chunxiang Zhu (2005)
Simulation Study of FIBL in Ge MOSFETs with High-k Gate Dielectrics2005 IEEE Conference on Electron Devices and Solid-State Circuits
Y. Nara, F. Ootsuka, S. Inumiya, Y. Ohji (2006)
High-k/metal gate stack technology for advanced CMOS2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
K. Maitra, N. Bhat (2003)
Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETsSolid-state Electronics, 47
Siguang Ma, Yaohui Zhang, M. Li, Weidan Li, Joe Xie, G.T.T. Sheng, A. Yen, Jianrong Wang (2001)
Gate-induced drain leakage current enhanced by plasma charging damageIEEE Transactions on Electron Devices, 48
Xuguang Wang, Jun Liu, Feng Zhu, Naoki Yamada, Dim-Lee Kwong (2004)
A simple approach to fabrication of high-quality HfSiON gate dielectrics with improved nMOSFET performancesIEEE Transactions on Electron Devices, 51
Yo‐Sheng Lin, Chung-Cheng Wu, Chih-Sheng Chang, Rong-Ping Yang, Wei-Ming Chen, J. Liaw, Carlos Díaz (2002)
Leakage scaling in deep submicron CMOS for SoCIEEE Transactions on Electron Devices, 49
W. Henson, N. Yang, S. Kubicek, E. Vogel, J. Wortman, K. Meyer, A. Naem (2000)
Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regimeIEEE Transactions on Electron Devices, 47
T. Aoyama, M. Sato, K. Sekine, K. Nagatomo, T. Watanabe, Y. Tsuchiya, T. Kobayashi, S. Kawanaka, A. Azuma, M. Takayanagi, Y. Toyoshima, M. Koyama, A. Nishiyama, K. Eguchi, Y. Tsunashima (2006)
HfSiON gate dielectric technology for CMOSFET application2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
A. Oates (2003)
Reliability issues for high-k gate dielectricsIEEE International Electron Devices Meeting 2003
Z. Ma, P. Lai, Yung Cheng (1993)
Off-state instabilities in thermally nitrided-oxide n-MOSFETsIEEE Transactions on Electron Devices, 40
Manuel Quevedo-Lopez, Siddarth Krishnan, D. Kirsch, C.H.J. Li, J. Sim, C. Huffman, J. Peterson, Byoung Lee, G. Pant, B. Gnade, M. Kim, Robert Wallace, D. Guo, H. Bu, Tso-Ping Ma (2005)
High performance gate first HfSiON dielectric satisfying 45nm node requirementsIEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
N. Yang, W. Henson, J. Wortman (2000)
A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxidesIEEE Transactions on Electron Devices, 47
G. Ribes, J. Mitard, M. Denais, S. Bruyère, F. Monsieur, C. Parthasarathy, Emmanuel Vincent, Gerard Ghibaudo (2005)
Review on high-k dielectrics reliability issuesIEEE Transactions on Device and Materials Reliability, 5
B. Tsui, Li-Feng Chin (2004)
A comprehensive study on the FIBL of nanoscale MOSFETsIEEE Transactions on Electron Devices, 51
Ming-Fu Li, W.R. Wang, H. Yu, C.X. Zhu, A. Chin, A. Du, J. Shao, W. Lu, X. Shen, P. Liu, S. Hung, P. Lo, D. Kwong (2006)
A novel high-k gate dielectric HfLaO for next generation CMOS technology2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, A. Nishiyama (2002)
Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristicsDigest. International Electron Devices Meeting,
Xiaoyan Liu, S. Lou, Z. Xia, D. Guo, Huiwen Zhu, Jinfeng Kang, R. Han (2001)
Characteristics of different structure sub-100nm MOSFETs with high-k gate dielectrics2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 1
S. Tan (2007)
Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65nm CMOS technologyMicroelectron. J., 38
Purpose Choosing suitable highK gate dielectrics to reduce the offstate leakage Ioff by edge direct tunneling mechanism, demonstrating that the decreased Ioff increase significantly when the gate dielectrics permittivity are above 25. The purpose of this paper is to report that HfSiON and HfLaO are promising gate dielectrics.Designmethodologyapproach The offstate gate current, drain current, and substrate current are investigated. The IdVgs characteristics for the 50 and 90nm NMOSFET with various gate dielectrics are studied. Edge direct tunneling current IEDT with various gate dielectrics including SiO2, Si3N4 and HfO2 are compared and this paper also examines the IEDT with HfSiON and HfLaO gate dielectrics.Findings IEDT prevails over conventional gateinduced drainleakage current IGIDL, subthreshold leakage current ISUB, bandtoband tunneling current IBTBT and it dominates offstate leakage current. A large increase in offstate leakage current occurs for smaller devices due to increase in IEDT at high Vdd. Although IEDT is decreased with increase in gate dielectrics permittivity K. The authors found fringing induced barrier lowering FIBL which could introduce significant offstate leakage current for K>25. Fortunately, the IEDT with HfSiON and HfLaO gate dielectrics which are twofive orders of magnitude lower than that of SiO2, furthermore, FIBL for HfSiON and HfLaO gate dielectrics are inconspicuous. Moreover, HfLaO and HfSiON have superior electrical performance and thermal stability.Originalityvalue Both edge direct tunneling and FIBL are considered to alternate highK gate dielectrics for nanoscale MOSFET.
Microelectronics International – Emerald Publishing
Published: Dec 28, 2007
Read and print from thousands of top scholarly journals.
Already have an account? Log in
Bookmark this article. You can see your Bookmarks on your DeepDyve Library.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Copy and paste the desired citation format or use the link below to download a file formatted for EndNote
Access the full text.
Sign up today, get DeepDyve free for 14 days.
All DeepDyve websites use cookies to improve your online experience. They were placed on your computer when you launched this website. You can change your cookie settings through your browser.