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Numerical simulation of heat transfer at the interface of dissimilar materials

Numerical simulation of heat transfer at the interface of dissimilar materials Purpose – The small dimensions of future device designs also imply a stronger effect of material boundary resistance. For nanoscale devices and structures, especially, interface phenomena often dominate their overall thermal behavior. The purpose of this paper is to propose molecular dynamics (MD) simulations to investigate the mechanical and thermal properties at Cu‐Al interface. Design/methodology/approach – The two‐temperature model (TTM)‐MD model is used to describe the electron‐phonon scattering at interface of different metals. Before the simulation of heat transfer process, a non‐ideal Cu‐Al interface is constructed by simulating diffusion bonding. Findings – According to the simulation results, in unsteady state, the temperature distribution and the displacements of atoms near the interface tend to generate stress and voids. It reveals the damage mechanics at the interface in heat transfer. Originality/value – The atomic model proposed in this paper is computationally efficient for interfacial heat transfer problems, and could be used for investigation of other interfacial behaviors of dissimilar materials. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png International Journal of Numerical Methods for Heat and Fluid Flow Emerald Publishing

Numerical simulation of heat transfer at the interface of dissimilar materials

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References (19)

Publisher
Emerald Publishing
Copyright
Copyright © 2010 Emerald Group Publishing Limited. All rights reserved.
ISSN
0961-5539
DOI
10.1108/09615531011008136
Publisher site
See Article on Publisher Site

Abstract

Purpose – The small dimensions of future device designs also imply a stronger effect of material boundary resistance. For nanoscale devices and structures, especially, interface phenomena often dominate their overall thermal behavior. The purpose of this paper is to propose molecular dynamics (MD) simulations to investigate the mechanical and thermal properties at Cu‐Al interface. Design/methodology/approach – The two‐temperature model (TTM)‐MD model is used to describe the electron‐phonon scattering at interface of different metals. Before the simulation of heat transfer process, a non‐ideal Cu‐Al interface is constructed by simulating diffusion bonding. Findings – According to the simulation results, in unsteady state, the temperature distribution and the displacements of atoms near the interface tend to generate stress and voids. It reveals the damage mechanics at the interface in heat transfer. Originality/value – The atomic model proposed in this paper is computationally efficient for interfacial heat transfer problems, and could be used for investigation of other interfacial behaviors of dissimilar materials.

Journal

International Journal of Numerical Methods for Heat and Fluid Flow – Emerald Publishing

Published: Jan 12, 2010

Keywords: Metals; Heat transfer; Thermal resistance; Diffusion; Bonding; Temperature distribution

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