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Low-damaged p-type doping of MoS2 using direct nitrogen plasma modulated by toroidal-magnetic-field

Low-damaged p-type doping of MoS2 using direct nitrogen plasma modulated by toroidal-magnetic-field Low damaged doping of two-dimensional (2D) materials proves to be a significant obstacle in realizing fundamental devices such as p–n junction diodes and transistors due to its atom layer thickness. In this work, the defect formation energy and p-type conduction behavior of nitrogen plasma doping are investigated by first principle calculation. Low damaged substitutional p-type doping in MoS2 using low energy nitrogen plasma composed of N+ and N2+ is achieved by a novel toroidal magnetic field (TMF). The TMF helps to raise the concentration of N2+ ions at low RF power condition. The electrical characteristics of double-layer MoS2 field-effect transistors (FETs) clearly show an efficient p-type doping behavior. Atomic force microscope is applied to verify the slight damage in MoS2. X-ray photoelectron spectroscopy, photoluminescence and Raman spectroscopy confirm the effective p-type doping characteristic with weak damage. These findings provide a low damage technology for efficient carrier modulation of MoS2 and other homogeneous TMDC materials, which overcomes barriers in developing 2D electronic and optoelectronic devices. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nanotechnology IOP Publishing

Low-damaged p-type doping of MoS2 using direct nitrogen plasma modulated by toroidal-magnetic-field

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References (31)

Copyright
Copyright © 2019 IOP Publishing Ltd
ISSN
0957-4484
eISSN
1361-6528
DOI
10.1088/1361-6528/ab4402
Publisher site
See Article on Publisher Site

Abstract

Low damaged doping of two-dimensional (2D) materials proves to be a significant obstacle in realizing fundamental devices such as p–n junction diodes and transistors due to its atom layer thickness. In this work, the defect formation energy and p-type conduction behavior of nitrogen plasma doping are investigated by first principle calculation. Low damaged substitutional p-type doping in MoS2 using low energy nitrogen plasma composed of N+ and N2+ is achieved by a novel toroidal magnetic field (TMF). The TMF helps to raise the concentration of N2+ ions at low RF power condition. The electrical characteristics of double-layer MoS2 field-effect transistors (FETs) clearly show an efficient p-type doping behavior. Atomic force microscope is applied to verify the slight damage in MoS2. X-ray photoelectron spectroscopy, photoluminescence and Raman spectroscopy confirm the effective p-type doping characteristic with weak damage. These findings provide a low damage technology for efficient carrier modulation of MoS2 and other homogeneous TMDC materials, which overcomes barriers in developing 2D electronic and optoelectronic devices.

Journal

NanotechnologyIOP Publishing

Published: Jan 3, 2020

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