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A layered semiconductor, lanthanum tantalum oxide was prepared by solid reaction at high temperature, and the processes for the modification of the interlayers by protonation, intercalation and pillaring were investigated. n -Butylamine could easily be intercalated into the interlayers of HLaTa 2...
This note presents results on Hall effect characteristics (mobility and density of majority charge carriers) of undoped p-type and n-doped pyrite thin films. Carrier mobilities between 200 and 0.07 cm 2 / V s have been measured in undoped p-type films. Doped n-type films present values which vary...
The measurement of the bulk minority carrier lifetime of semiconductors requires efficient passivation of the recombination states at the surface. While numerous recipes have been published for Si-surface passivation, no adequate passivation methods are available for Ge. This paper presents a new...