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Galvanomagnetic effects have been examined in p - GaSb -GaSb using uniaxial compressional stresses up to 10 10 dyn/ cm 2 in the temperature range 50-300 °K. At liquid-nitrogen temperature, the high-field Hall coefficient shows a weak relative maximum at low stresses, but decreases monotonically...
The electronic structures of trigonal tellurium and trigonal selenium have been investigated by photoemission, using conventional energy-distribution curves (EDC's) and their second derivatives which reveal significant fine structure, embedded, but hardly observable, in EDC's. The two p valence...
The photoelastic constants of NaCl, NaF, KCl, and KI have been determined by studying Brillouin scattering at 90° and 180°. The absolute intensities of the Brillouin doublets were obtained by comparing the Brillouin intensity with the intensity scattered by toluene, which has a well-known...
Expressions are obtained for the anharmonic contributions to the zero-point energy of order η 4 , for a crystal in which every atom is on a site of inversion symmetry. The Ludwig approximation has been used to estimate the anharmonic contributions for a nearest-neighbor central-force model of...
First-order electrogyratory effects can be expressed in terms of a nonlinear gyratory susceptibility χ g NL that is defined analogously to the conventional nonlinear optical susceptibility. It is shown that χ g NL can be represented as Δ g ( ω ) χ ( ω ) 2 χ ( 0 ) , where χ ( ω ) and χ (...
The uniform-charge-background (jellium) model of a bounded metal is shown to give good estimates of the electrostatic surface-dipole barriers in simple metals.
Thermoreflectance measurements have been made at 85 K on ten Se-doped-InAs samples with carrier concentrations in the range (0.2-6) × 10 19 cm - 3 . The spectrum in each case contained two well-defined structures in the range 0.5 to 1.6 eV. The structures have been related to transitions from...
The empirical relation E 0 ∝ ( 1 a 0 2 ) between the energy gap E 0 and lattice constant a 0 has been found to hold for a wide range of semiconductors with the cubic NaCl crystal structure.
Optical-transmission measurements at 20 and 77 K were used to deduce the magnitude and spectral dependence of the optical cross section σ I for transitions from neutral Mn acceptors to the valence bands of GaAs. The threshold energy for such transitions is E a = 0.11 eV, and σ I was studied...
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