1 - 7 of 7 articles
Purpose At present, over 95 percent of the manufactured packages are still being wire bonded. Owing to the ongoing trend of miniaturization, material changes, and cost reduction, wire bondrelated failures are becoming increasingly important. This paper aims to understand these kinds of...
Purpose The purpose of this work is to present the strategies and current state of development in the field of micro solid oxide fuel cells SOFC.Designmethodologyapproach In the paper recent strategies of conventional and single chamber SOFC are described. Some examples based on the author's...
Purpose The successful use of piezoceramic thick films in sensors and actuators requires a thorough understanding of their electrical and electromechanical characteristics. Since these characteristics depend not only on the material's composition but also on its compatibility with various...
Purpose This paper attempts to review recent advances in wire bonding using insulated wire and new challenges in wire bonding for advanced microelectronics packaging.Designmethodologyapproach Dozens of journal articles, conference articles and patents published or issued in 20042007 are...
Purpose Capacitors are frequently used in electronic circuits. Thickfilm technology allows fabrication of such components in the case of small and mediumcapacitance values. They can also be manufactured in LTCC structures. The paper seeks to investigate the electrical properties of thickfilm and...
Purpose To provide an insight of the intricacies of ionsensitive fieldeffect transistor ISFET encapsulation and describe the presently available packaging solutions, indicating how the packaging requirements can be complied for various applications.Designmethodologyapproach ISFET packaging is a...
Purpose This paper aims to report on the use of radio frequency nitrogen plasmaassisted molecular beam epitaxy RFMBE to grow highquality ntype In0.47Ga0.53NGaN on Si111 substrate using AlN as a buffer layer.Designmethodologyapproach Structural analyses of the InGaN films were performed by using...
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