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Radical-enhanced atomic layer deposition uses oxygen radicals generated by a remote microwave-induced plasma as an oxidant to change the surface reactions of the alternately supplied trimethylaluminum precursor and oxygen radicals on a Ge substrate, which leads to the spontaneous formation of an...
A Ni (200 nm)/Cu x O (7 nm)/SiO 2 (20 nm)/W structure is fabricated in order to investigate its resistive memory properties. The resistance of the Ni/Cu x O/SiO 2 /W structure can be reversibly switched between a high-resistance state and a low-resistance state (LRS) by applied voltages in...
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