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Pattern placement error (or pattern distortion) caused by different thermal expansions between templates and substrates in nanoimprint lithography is experimentally investigated. Using fabricated nanorulers, placement errors are quantitatively measured. Our results prove that nanoimprint...
Laser interference lithography is reviewed as an adequate nanopatterning tool for devices with periodic structures. The structure size may practically be chosen in the range between 100 nm and 10.0 ॖ m by adjusting the angle of incidence ॒ of the incoming laser beam. The exposure method is...
We introduce simple double-casting replication methods for high-aspect-ratio microstructures fabricated by deep x-ray lithography using intermediate molds of soft materials. Two types of soft material are investigated. The ability to fabricate polymethylsiloxane (PDMS) molds with well-type...
Nanoimprinting has been recognized as a highly potential method of volume production for nanoscale devices. In the nanoimprinting process, the filling process of the mold cavity plays a key role in determining the productivity of the nanoimprinting process and the quality of the final imprint...
A technique to create nanopatterns on hard-to-machine bulk silicon carbide (SiC) with a laser beam is presented. A monolayer of silica ( Si O 2 ) spheres of 1.76-ॖ m and 640- nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of 355 and 532 nm . The...
We develop a new method to improve alignment accuracy. Specially designed two-step wafer alignment marks are evaluated for laser scan alignment to enhance wafer alignment. Wafer alignment accuracy data shows that it is enough to execute wafer alignment without failures in spite of the coarse...
In immersion lithography at 193 nm , water is inserted between a resist-coated wafer and the final lens element to improve resolution and depth of focus. Experiments have shown that some chemicals in the resist, particularly the photoacid generators, are soluble and therefore will leach out of...
This study presents an experimental method to determine the resist parameters at the origin of a general blurring of a projected aerial image. The resist model includes the effects of diffusion in the horizontal plane and image blur that originates from a stochastic variation of the focus...
The primary measure of process quality in nanoimprint lithography (NIL) is the fidelity of pattern transfer, comparing the dimensions of the imprinted pattern to those of the mold. Routine production of nanoscale patterns will require new metrologies capable of nondestructive dimensional...
We report an ultrasonic nanoimprint lithography (U-NIL) method that can overcome the drawbacks of energy consumption and long process times that occur in conventional nanoimprint lithography (NIL) methods. Instead of using heaters in conventional NIL, the proposed U-NIL employs an ultrasonic...
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