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The solid‐phase reaction of a thin film and a substrate induced by a transient annealing in the solid phase is analyzed in detail. The technique is based on the scanning of a line‐shaped energy beam. At a given point on the sample the transient process can be considered equivalent to an...
Catastrophic degradation related to local heating in GaAlAs visible lasers occasionally occurs under relatively low optical output power. To develop highly reliable lasers, we used laser Raman spectroscope with an argon ion laser focused at about 1 μm≂ to evaluate the local operating...
Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A...
Minority‐carrier diffusion has been investigated in as‐grown CdZnS/CuInSe 2 solar cells. Capacitance‐voltage ( C ‐ V ) and photoconductivity measurements are combined to determine diffusion and interface recombination processes. Diffusion lengths of about 2 μm and a small interface...
We have studied the Er and ErSi 2 contacts on p ‐Si. A correlation is found between the barrier height and the presence of an interfacial oxide layer. Samples with a thin interfacial oxide (∼ 3 Å) exhibit a barrier height of 0.68 eV. In contrast, samples without any detectable interfacial...
Vanadium dioxide undergoes a transition at about 68 °C where the physical properties of the oxide, in particular the index of refraction and possibly the density, abruptly change values. In this work the indices of refraction of thermally grown films of vanadium dioxide on a vanadium substrate...
Experimental results are presented which show that the dynamic Stark effect significantly reduces the small‐signal gain (in discharge‐excited CO 2 ) and absorption (in unexcited CO 2 ) at the line center of 4.3‐μm laser lines directly coupled to 10.4‐μm sequence‐band pump transitions....
A simple analytical theory is developed to describe the carrier distribution and the current flow in a punch‐through structure under the diffusion‐limited injection condition and negligible generation recombination effects. The current expression determined is similar to the diode current...
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