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The multiple‐pulse laser‐induced damage in metal mirrors investigated experimentally and theoretically by Lee, Koumvakalis, and Bass Opt. Eng. 2 2 , 419 (1983) can be described by N ≂exp I ( N )/ I ( N max ). This exponential relation between the number of pulses N required to cause failure...
Measurement of diode photocurrent represents a new method for obtaining extended x‐ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum‐on‐GaAs Schottky diode have been used to demonstrate this...
The dark electrical conductivity σ of In‐doped CdS films does not show a simply activated behavior. Appreciable curvature is seen in graphs of log σ vs T − 1 . This has been attributed to a temperature‐dependent activation energy or to a tendency of σ towards saturation at low...
The optical properties of ion‐beam‐sputtered Si and Ge have been measured using spectroscopic ellipsometry over the range of 2.5–5.0 eV. Measurements have been performed on films prepared at different substrate temperatures ( T s ) . An analysis of the spectroscopic ellipsometry data using...
We proposed a new method for evaluating mobilities of both Li + and SCN − ions in a polymeric solid electrolyte formed by poly (ethylene succinate) and LiSCN. The method is based on the isothermal transient ionic current (ITIC) technique by using an ion‐blocking platinum electrode and an...
A new model of contact charging based on the change of interfacial dipole energy is proposed. The model can be used to explain the charge exchange between an insulating polymer and a metal with a thin interfacial oxide layer. The energy shift of the polymeric electronic states relative to the...
Multimegavolt bremsstrahlung backscattering from paraffin yields a photon spectrum mainly below 0.6 MeV. The measured dose in the backscattered radiation agrees with Monte Carlo computations to within 10%.
In this work we present an extension of Norde’s forward I ‐ V plot. This modified method allows us to obtain reliable values for three different parameters ( n , R , and I s ) in nonideal Schottky barrier diodes with high series resistance.
We present the results of the application of photoresponse techniques to the study of the transport of electrons past an energy barrier. In this study, the barrier was provided by a thin layer of AlAs sandwiched between GaAs layers. The experiment measures the voltage resulting from the flow of...
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