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We have investigated the magnetic domain behavior during the hcp‐to‐fcc phase transition in cobalt using electron microscopy. From single‐crystal and polycrystalline samples it has been observed that defects, such as stacking faults and grain boundaries, will aid the transformation of the...
The characteristics of TE modes in a transversely magnetized plane‐parallel waveguide containing a relativistically moving warm plasma have been studied. The effects of the finite electron temperature of the plasma have been incorporated in terms of an anisotropic pressure. Using the first...
A tracer technique using radioactive 31 Si ( T 1/2 =2.62 h) was used to study solid‐phase epitaxial growth (SPEG) of silicon. After depositing Pd and Si onto single‐crystal substrates which had been activated in a nuclear reactor, Pd 2 Si was formed with about equal amounts of radioactive and...
The frequency shift and loss of a microwave cavity for ellipsoidal samples in the skin‐depth regime are calculated using the surface impedance concept. Equations qualitatively different from the widely used quasistatic equations are obtained when the skin depth is much smaller than the sample...
The dispersion relation for electromagnetic surface waves propagating at the interface between a relativistic electron beam and vacuum is derived. The excitation of surface modes in a plasma at rest by a relativistic electron beam is discussed.
The recently observed efficient ionization of sodium vapor by a laser tuned to the sodium resonance line can be explained in terms of the large population of resonance‐state atoms created by laser‐induced radiative equilibrium. This large population of excited atoms represents (a) a reservoir...
The surface conductivity of fused quartz has been examined. An exponential conductivity dependence upon vapor pressure is found for the highly polar water vapor and ammonia gases, whereas the nonpolar gas of carbon dioxide has no measurable effect. The results are in agreement with an electronic...
N ‐ or S ‐type switching in the I ‐ V characteristics of semiconductor resistive bars immersed in liquid nitrogen occur if the I 2 R power per surface area generated in the semiconductor exceeds a certain threshold value. Such switching has been consistently misinterpreted and attributed to...
A model for radiation‐induced bulk electrical conductivity in insulators is developed and discussed. The characteristic equations are coupled nonlinear stiff differential equations for which analytical solutions are presented. Solutions are given for the buildup of conductivity during constant...
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