Within the last year
Within the past 3 years
1 - 10 of 82 articles
Changes of ultrasonic transit times in compression‐annealed pyrolytic graphite (CAPG) were measured as a function of temperature (4–300°K at atmospheric pressure) and of pressure (0–20 kbar at 295°K). From the low‐temperature results, obtained for five independent acoustic modes, the...
Thin films of bismuth‐germanium have been fabricated in vacuum by the method of codeposit vapor quenching. In this paper, the third of a three part series, the evaluation of a select set of amorphous bismuth‐germanium thin films as infrared detectors is reported. The evaluation indicates that...
Mode conversion in a periodically perturbed thin‐film optical waveguide is studied in detail. Three different types of perturbations are considered: periodic index of refraction of the film, periodic index of refraction of the substrate, and periodic boundary. The applications in filters, mode...
The thermal expansion along the growth axis of crystalline TTF‐TCNQ was determined between 5 and 300 K. The total change in length over this range was found to be approximately 3%.
The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi 2 is formed at a linear rate in time....
Single‐crystal sapphire was found to lose some of its original transparency in the near infrared (0.9 μm) when subjected to strong dynamic compression in the pressure range between 100–130 GPa (1–1.3 Mbar). Experimental evidence of this phenomenon is presented and discussed in relation to...
The pressure dependence of the energy gap has been determined at 63 and 77°K for GaSb, InAs, and InSb by tuning their laser‐emission frequencies with hydrostatic pressures up to 8 kbar. The pressure variation of mode frequency and refractive index has also been measured for each semiconductor....
The defect morphology of Se‐doped GaAs grown by CVD on undoped 100‐oriented GaAs substrates has been studied by transmission electron microscopy. Two types of samples are discussed: The first is nearly saturated, n ≅ N Se ≅ 4 × 10 18 cm −3 ; the second is supersaturated, n ≅ 1.5 ×...
Thermodynamic calculations are presented which provide explicit expressions for the combined temperature and phosphorus partial pressure dependences of the Ga‐ and P‐vacancy concentrations in GaP. This work extends the applicability of earlier results for the vacancy concentrations, obtained...
Read and print from thousands of top scholarly journals.
Sign up with Facebook
Sign up with Google
Already have an account? Log in
Save this article to read later. You can see your Read Later on your DeepDyve homepage.
To save an article, log in first, or sign up for a DeepDyve account if you don’t already have one.
Sign Up Log In
To subscribe to email alerts, please log in first, or sign up for a DeepDyve account if you don’t already have one.
To get new article updates from a journal on your personalized homepage, please log in first, or sign up for a DeepDyve account if you don’t already have one.