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Some unusual annealing properties of the radiation damage in lithium‐diffused silicon are discussed. These properties are (1) spontaneous room‐temperature recovery, (2) the effect of oxygen content in silicon on the recovery, (3) the effect of the defect concentration on the recovery, (4)...
Drift velocities of electrons in a gaseous neon plasma have been obtained by measuring the discharge current, radial density profile of electrons, and axial electric field in the positive column of a neon discharge for E∕n a (V cm 2 ) values ranging between 2.8×10 −17 and 2.4×10 −16 at a...
Photoemission yield measurements were made on amorphous selenium from about 6 to 21 eV. The yield curve exhibits a change in slope at about 7.8 eV corresponding to a maximum in the imaginary dielectric constant. The photoemission threshold is obtained by using a threshold law equation derived by...
A method is developed for the determination of the effective dissociation potential ( V d ) of an alkali compound used as a seed in the low‐temperature and high‐pressure working fluid of a magnetohydrodynamic (MHD) generator. For a simple compound like potassium chloride (KCl) V d can be...
We have computed the excess carrier lifetime for conduction band‐heavy‐hole band Auger recombination for n ‐type Hg 1− x Cd x Te. The general theory assuming parabolic bands and a constant value for the overlap integrals has been developed by Beattie and Landsberg. We have included the...
An analysis of the infrared‐interference method of measuring epitaxial layer thickness is given which shows that the technique is useful for measurement of layers thinner than one micron. The connection between plasma resonance and infrared interference is established. A new method of...
Using computer solutions of the relevant differential equations, many authors have determined the velocity for which traveling domains exist in a semiconductor with a region of negative differential mobility. Recently, Gunn presented a topological argument leading to a closed form equation for...
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