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The capacitance‐voltage ( C‐V ) relationship of a Schottky barrier diode is predicted for an energy distribution of impurity levels having spatially uniform concentration in an n ‐type semiconductor. The model applies for forward and reverse bias voltages at modulation frequencies near dc...
The Raman spectrum of ZnTe has been investigated. The fundamental frequencies have been found to be v LO =208.3±0.5 cm −1 and v TO = 177.5±0.5 cm −1 . The temperature variation of v LO has been examined between room temperature and 4°K. The zone boundary frequencies at the critical points...
The minority carrier diffusion lengths on both sides of Cu 2 S☒CdS heterojunctions have been measured directly by light microprobe techniques. In approximately 1 Ω cm CdS the hole diffusion length was found to be between 3×10 −4 and 7×10 −4 cm. The high‐conductivity Cu 2 S formed on...
Epitaxial films of CdS were grown on CdS, ZnS, GaAs, Ge, mica, and SrF 2 substrates using a chemical transport reaction. Electron diffraction, ion blocking and scattering, microscopy, and etch studies of the CdS films were carried out. The surface morphology of the films was studied. A...
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