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The capacitance‐voltage ( C‐V ) relationship of a Schottky barrier diode is predicted for an energy distribution of impurity levels having spatially uniform concentration in an n ‐type semiconductor. The model applies for forward and reverse bias voltages at modulation frequencies near dc...
The minority carrier diffusion lengths on both sides of Cu 2 S☒CdS heterojunctions have been measured directly by light microprobe techniques. In approximately 1 Ω cm CdS the hole diffusion length was found to be between 3×10 −4 and 7×10 −4 cm. The high‐conductivity Cu 2 S formed on...
The Raman spectrum of ZnTe has been investigated. The fundamental frequencies have been found to be v LO =208.3±0.5 cm −1 and v TO = 177.5±0.5 cm −1 . The temperature variation of v LO has been examined between room temperature and 4°K. The zone boundary frequencies at the critical points...
Epitaxial films of CdS were grown on CdS, ZnS, GaAs, Ge, mica, and SrF 2 substrates using a chemical transport reaction. Electron diffraction, ion blocking and scattering, microscopy, and etch studies of the CdS films were carried out. The surface morphology of the films was studied. A...
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