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Microwave measurements have been made at 9.5 GHz in the temperature range of 4.2°–30°K on a series of spinel single crystals with nominal compositions (M 1− x Fe x 2+ Fe 2 3+ )O 4 ; M is nickel or magnesium and x assumes values between 0.16 and 0.61. All samples developed a noncubic...
Internal friction and Young's modulus measurements have been performed on a series of dilute copper—silicon, copper—germanium, and copper—tin alloys at temperatures ranging from 4° to 300°K in order to determine the extent of thermally activated dislocation depinning from solute atoms....
A simple theory based on plane waves in a cold magnetoplasma is proposed to account for experimentally observed absorption bands for transverse electric waves impinging on a microwave cavity. When the cyclotron frequency is equal to the resonant frequency of the TE 111 mode of a cylindrical...
When a strong electric field is applied to a high‐conductivity, nearly intrinsic semiconductor, it has been shown that the effective diffusion coefficient may become negative and lead to an instability. The conditions for occurrence of this instability have been investigated in detail, and...
The intensity dependence of the anomalous photovoltaic effect was measured on ZnS crystals at room temperature and at 77°K. A decrease in photovoltage caused by an increase in illumination intensity was observed in many crystals. For all the investigated crystals, the short‐circuit current was...
Temperature‐gradient zone melting has been utilized to study growth kinetics in InSb. Indium and lead were used as zone metals. In the temperature region between 410° and 460°C, the rate of zone migration was observed to be dependent on both the thickness of the zone and the orientations of...
This paper examines the temperature dependence predicted by theories of dispersed barrier hardening. Most of interaction potentials employed in the theories are similar. It is not possible to select one of several interaction potentials on the basis of an experimentally obtained...
Optical fluorescence and absorption associated with tellurium, an isoelectronic trap in CdS, are described. At low temperatures two fluorescence bands can appear: one, with a peak near 6000 Å, occurs in lightly doped crystals containing less than 10 19 Te atoms∕cm 3 ; the other, with a peak...
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