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Symmetric faceted etch hillocks have been observed on certain germanium surface orientations exposed to an H 2 O 2 ☒HF (Superoxol) etchant. Considerations of surface curvature and etch rate lead to the conclusion that the faces bounding the hillocks must be at saddle points on an etch rate vs...
The high‐speed microwave semiconductor switch, employing an n ‐type germanium diode, has been further investigated to determine the ultimate switching speed. Data are presented which show that pulse rise and decay times are as fast as 3 mμsec. This limit is imposed by the capacitances and...
The surface photovoltage method uses the junction‐like properties of a semiconductor surface as a means for studying the decay of excess carriers. No more than capacitive contact with the specimen is required to detect the surface photovoltage which, in the millivolt range, is a linear function...
The effect of porosity on several material constants can be described by three types of empirical functions. One of these features linear increase from zero to unity of the relative bulk material constant when the relative density increases from π∕6 to 1. An almost identical function results...
WO 3 undergoes a phase transformation from monoclinic to orthorhombic at approximately 320°C and from orthorhombic to tetragonal at 720°C. A detailed study of the variation of the unit cell dimensions over the range from room temperature to 1000°C has been carried out using high‐temperature...
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