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A complete design flow starting from the technological process development up to the fabrication of digital circuits is presented. The aim of this work is to demonstrate the GaAs Enhancement/Depletion (E/D) double stop-etch technology implementation feasibility for digital applications, aimed at...
This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance (𝑔m), output impedance (𝐶ds and 𝑅ds), feedback capacitance (𝐶dg), input capacitance (𝐶gs), and gate resistance...
The overall aim of the International Journal of Microwave Science and Technology is to bring together both the research and development aspects of the radio frequency (RF) technology covering the whole range of sub-gigahertz to sub-millimeter-wave frequency spectrum.
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