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We present a photoluminescence (PL) study on the growth mode changeover during growth of Ge on Si(100) substrates. Intense PL signals originating from both the flat Ge layer and the three‐dimensional (3D) Ge islands are observed from Si/Ge/Si quantum wells with various Ge coverage. The onset of...
Current flow through Pt/(Ba 0.7 Sr 0.3 )TiO 3 /Pt stack consists of both polarization current and electronic leakage current, which were separated by monitoring the discharging current when applied voltage was turned off. Electronic current comes from electrical field enhanced Schottky emission...
We have used x‐ray photoelectron spectroscopy (XPS) to measure the dependence of the InAs/GaSb valence band offset on both interface composition and growth order. Molecular beam epitaxy was used to grow InAs‐on‐GaSb and GaSb‐on‐InAs interfaces with both InSb‐like and GaAs‐like...
The growth of high quality AlN and GaN thin films on basal plane sapphire, (100), and (111) silicon substrates is reported using low pressure metalorganic chemical vapor deposition. X‐ray rocking curve linewidths of about 100 and 30 arcsec were obtained for AlN and GaN on sapphire,...
We have measured hot carrier relaxation in GaAs V‐groove quantum wires using time‐resolved photoluminescence. Relaxation between confined one‐dimensional subbands is clearly observed on the time scale of several hundred picoseconds. A simulation of the experiment using a hybrid multisubband...
The waveguiding characteristics of a novel power switch with one input and n outputs (1× n ) using oblique incidence to a nonlinear slab is proposed. With a proper incident optical power, the emitted soliton in the nonlinear slab can be efficiently directed to any waveguide in a array of n...
We propose and demonstrate a 1 Gb/s high quantum efficiency Si MSM metal‐semiconductor‐metal detector which is complementary metal‐oxide semiconductor compatible. The detector absorbs over 50% of the light entering the active layer at a wavelength of λ=0.88 μm. © 1995 American Institute...
The nonlinear optical properties of sodium doped potassium titanate phosphate crystal are discussed. (AIP) © 1995 American Institute of Physics.
Data are presented on the electrical behavior and the reliability of postfabrication native‐oxide‐passivated visible‐spectrum AlGaAs–In(AlGa)P p ‐ n heterostructure light emitting diodes (LEDs). The LEDs are oxidized (H 2 O+N 2 , 500 °C, 1 h) after metallization, thus sealing all...
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