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Effect of a nitrogen electron‐cyclotron‐resonance (ECR) microwave plasma on near‐surface composition, crystal structure, and morphology of the As‐stabilized GaAs (100) surface is investigated with the use of digitally image‐processed in situ reflection high energy electron diffraction....
BaTiO 3 thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO 3 films by an MOCVD process. The films had a cube–cube...
Oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient at 950 °C have been investigated using x‐ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), and cross‐sectional transmission electron...
A simple procedure is proposed to calculate the minority carrier recombination lifetime from forward diode I / V characteristics. By using diodes with strongly different perimeter to area ratio and by taking into account the diode ideality, more accurate lifetime values are obtained. The thus...
A novel diol based metalorganic route has been developed and employed to deposit BaTiO 3 films on Si and Pt coated Si substrates. Differential thermal analysis, thermogravimetric analysis, x‐ray photoelectron spectroscopy, and x‐ray diffraction collectively indicated that BaTiO 3 was formed...
Diamond film growth in low‐pressure premixed propylene/oxygen flames is demonstrated. Well‐faceted films are grown at a pressure of 180 Torr and a fuel/oxygen ratio of 0.47. Using propylene as the fuel may greatly improve the economics of flame synthesis of diamond, since propylene is an...
A study of the effect of growth parameters on the resulting crystalline quality of CdTe epilayers grown by metalorganic chemical vapor deposition (MOCVD) technique is reported. The crystalline quality of the MOCVD CdTe (111)B epilayers is investigated by the double crystal rocking curve (DCRC)...
The depth distribution of open‐volume defects has been studied in Si(100) crystals grown by molecular beam epitaxy at 300 °C by the variable‐energy monoenergetic positron beam technique combined with well‐controlled chemical etching. This procedure gave a 10 nm depth resolution which is a...
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