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Epitaxial Si/praseodymium oxide/Si heterostructures were grown in situ on (111) oriented Si substrates using pulsed laser deposition. Growth of the oxide layer under oxygen deficient conditions resulted in hexagonal Pr 2 O 3 ( h ‐Pr 2 O 3 ) films which displayed a (001) Pr 2 O 3 ∥(111) Si ,...
Micro‐Raman investigations have been carried out at various spots in and around oval defects in epitaxially grown 〈100〉 GaAs wafers. Changes in the crystalline orientation have been observed within the oval defect structure as compared to the normal region. However, the crystalline quality...
Although it is known that some of the high‐ T c phases react rapidly with water, CO 2 , CO, and acids, no systematic comparison of the relative reactivities of the various cuprate superconductors is available. In this letter, x‐ray powder diffraction, scanning electron microscopy, x‐ray...
We analyze the influence of the band gap offset at the quantum well (QW) heterojunctions on the performance of QW lasers. It is shown that, in addition to the strain, optimization of the band gap offset also leads to improved performance in QW lasers, especially in enabling a simultaneous...
Nanometer‐scale wires cut into a Si/Si 0.87 Ge 0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low‐energy broadband emission at around 0.8 eV and...
We present an absolute measurement of a two‐photon absorption (TPA) coefficient of C 60 thin film at 633 nm. Large values of β≊4.4 cm/W were determined. A nearly resonant TPA transition around the 3.76 eV absorption region was discussed.
Exposure of Si 1− x Ge x (111) to ultraviolet light in air at room temperature is shown, using angle‐resolved x‐ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two‐phase oxide consisting of SiO 2 and GeO 2 . Segregation of Ge was not observed at...
The current‐voltage characteristics of Si/Si 1− x Ge x hole resonant tunneling structures in the presence of strong magnetic fields both parallel and perpendicular to the interfaces revealed new resonances for the latter configuration due to Landau level tunneling. However, there are...
Quantitative x‐ray diffraction (XRD) and high resolution electron microscopy (HREM) have been applied to the analysis of an epitaxial CoO/NiO superlattice. This example shows that the qualitative information determined directly from a XRD spectrum or HREM image is limited and can even be...
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