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This letter reports the successful growth of short period (ZnSe) 4 /CdSe 4 strained layer superlattices on (100) GaAs surface by atomic layer epitaxy. The superlattice was characterized by x‐ray diffraction and Raman scattering. Superlattice period was calculated from the satellite peaks and...
The recombination rate constants for Xe + +Cl − +Ne→XeCl∗+Ne and NeXe + +Cl − +Ne→XeCl∗+2Ne have been calculated in a temperature range of 100–400 K. At 7.34×10 19 cm −3 of gas density, both rate constants of the recombinations are found to increase to ∼7.5×10 −6 cm 3 /s at...
We have generated a tunable second harmonic of CO 2 laser radiation noncritically for the first time in a potential mixed chalcopyrite crystal AgGa x In 1− x Se 2 . Wide angular acceptance and increased conversion as compared to AgGaSe 2 have been observed and the tuning characteristics have...
Growth of rough polycrystalline silicon films has been achieved on SiO 2 surfaces over a broad temperature range (≥100 °C) using SiH 4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough...
AlInAs/GaInAs npn heterojunction bipolar transistors (HBTs) have been grown over a substrate temperature range of 280–450 °C with Be base doping levels ranging from 2.0×10 19 to 1.6×10 20 cm −3 . We have determined that for a desired base doping level there exists an optimum growth...
The effects of a degenerate two‐dimensional electron gas on the interband optical excitations, occurring in the active channel of Al 0.32 Ga 0.68 As/In 0.15 Ga 0.85 As/GaAs high electron mobility transistor structures, were investigated by using phototransmittance spectroscopy. The ground state...
We have grown diamond films on films of cubic boron nitride (cBN). The cBN films were grown on Si(100) substrates using ion‐assisted pulsed laser deposition. Fourier transform infrared (FTIR) spectroscopy indicated that the BN films contained ∼75% sp 3 ‐bonded cBN. The as‐grown cBN films...
A working p ‐type Si metal semiconductor field‐effect transistor structure, utilizing a boron delta‐doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility of 120 (180) cm 2 V −1 s −1 at 300 (77) K has been obtained. The sheet...
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