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X‐ray photoelectron spectroscopy (XPS) and E ‐polarization‐dependent S K ‐edge x‐ray absorption near‐edge structure (XANES) are used to characterize the chemical structure and site location of S on the (NH 4 ) 2 S‐treated GaAs (100) surface. XPS studies show that S forms chemical...
New lines in the low temperature luminescence spectra of lightly aluminum doped p ‐type films of 3 C , 6 H , and 4 H SiC are identified and associated with the recombination of a neutral aluminum acceptor four particle bound exciton complex.
In an ultrahigh vacuum apparatus, c ‐axis oriented YBa 2 Cu 3 O 7− x (YBCO) thin films were deposited by an ozone‐assisted reactive coevaporation method and characterized by low‐energy electron diffraction (LEED) and low‐energy ion scattering spectroscopy (LEISS). A clean surface with...
We propose a new method for modulating laser radiation by controlling simultaneously the pumping current and the optical gain in the active region. The latter can be independently varied by modulating the effective carrier temperature. The method allows to eliminate the relaxation oscillations...
Through numerical simulation of several hypotheses concerning the degradation of hydrogenated amorphous silicon p ‐ i ‐ n solar cells under illumination, we have established a set of ‘‘degradation rules.’’ Comparing the measured white‐light characteristic as a function of intensity,...
A new microscopic mechanism of a domain reversal in outdiffused LiNbO 3 is proposed. Computer results are in good agreement with experimental data.
The ablation of lithium niobate (LiNbO 3 ), poly(tetrafluoroethylene) (PTFE, teflon), poly(methylmethacrylate) (PMMA) and polyimide (PI) by 500 fs UV excimer laser pulses at 248 nm is reported. Time‐resolved measurements were carried out with pulse pairs of variable delay in the range from...
We have investigated the role of surfactant coverage and bonding for growth of Ge on Si(111). At 470 °C Ge grows on Si(111)‐(7×7) in a Stranski–Krastanov fashion. Preadsorption of 1‐ML Ga at 500 °C forms a Ga:Si(111)‐(6.3×6.3) structure and alters the Ge growth mode from...
Thin layers of metallic copper (up to a few hundreds angström) were deposited onto poly(phenyl quinoxaline) (PPQ), a new thermostable polymer. As suggested by x‐ray photoelectron spectroscopy (XPS) and ascertained by a new type of application of high resolution electron‐energy‐loss...
A transient capacitance study of antimony‐doped bulk GaAs has led to the identification of two energy levels related to the Sb Ga heteroantisite defect. The levels with electron emission activation energies of 0.54 and 0.70 eV are typically overshadowed by omnipresent EL3 and EL2 traps related...
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