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Coherent ballistic transport through a cavity in a quantum electron waveguide is examined. Electrons passing through the cavity excite vortices in the current density in the cavity. The circulating currents may be larger than the current in the waveguide leads. Vortex excitations are possible...
A simple form for an implantation profile of monoenergetic, low‐energy (1–10 keV) positrons in solids is presented. Materials studied include aluminum, copper, molybdenum, palladium, and gold with atomic number ranging from 13 to 79. A simple set of parameters can describe the currently used...
Nitridation of titanium layer is performed in a high‐pressure (5.9 kg/cm 2 ) ammonium (NH 3 ) ambient. Although the nitridation of titanium surface does not occur at 700 °C in an atmospheric pressure, it does occur at 650 °C in an ammonium pressure of 5.9 kg/cm 2 . Nitridation temperature can...
We report, for the first time, the growth of high quality InP/InGaAs multiquantum well modulator arrays on both the 100 and the 100 faces of the same InP wafer using an indium‐free wafer mounting technique in gas source molecular beam epitaxy.
We report the results of femtosecond optical transient absorption experiments performed on the superconducting compounds YBa 2 Cu 3 O 7− x ( x ∼ 0) and Bi 2 Sr 2 Ca 2 Cu 3 O 10+δ (δ ∼ 0) and nonsuperconducting YBa 2 Cu 3 O 6+ y ( y <0.4) for sample temperatures ranging from ∼7 K to room...
Epitaxial ReSi 2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4 He backscattering and channeling spectrometry. The minimum yield of 100 axial channeling increases with increasing exposure of the ReSi 2 sample to the analyzing He beam. This means that ReSi 2...
A deep state possessing similar properties to those reported for D X centers in the AlGaAs system has been observed at atmospheric pressure in GaSb moderately doped with sulfur. The first detailed deep level transient spectroscopy study of this material has revealed a large energy barrier to...
A cross‐slip mechanism, based on a commonly observed dislocation configuration and which can produce multiple misfit dislocations in the direction orthogonal to the initial slip direction, is put forth. The mechanism has eight crystallographic variants in (001) epitaxy, and is itself...
The threshold conditions, under which a spatial subharmonic beam may arise when a Bi 12 SiO 20 crystal is illuminated by two pump beams, are investigated. It is shown that a nonlinear theory based on the material equations leads to good qualitative agreement with experiments
The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III‐V epitaxy. The gas has...
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